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  <titleInfo>
    <title>Semiconductor growth, surfaces, and interfaces</title>
  </titleInfo>
  <name type="personal">
    <namePart>Davies, G. J.</namePart>
  </name>
  <name type="personal">
    <namePart>Williams, R. H.</namePart>
  </name>
  <name type="corporate">
    <namePart>Royal Society (Great Britain)</namePart>
  </name>
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    <place>
      <placeTerm type="text">London</placeTerm>
    </place>
    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>Published by Chapman &amp; Hall for the Royal Society</publisher>
    <dateIssued>c1994</dateIssued>
    <edition>1st ed.</edition>
    <issuance>monographic</issuance>
  </originInfo>
  <physicalDescription>
    <extent>ix, 158 p. : ill. ; 25 cm.</extent>
  </physicalDescription>
  <note type="statement of responsibility">edited by G.J. Davies and R.H. Williams.</note>
  <note>Includes bibliographical references and index.</note>
  <subject authority="lcsh">
    <topic>Semiconductors</topic>
    <topic>Surfaces</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Epitaxy</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Electronic devices</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Photonics</topic>
  </subject>
  <classification authority="lcc">TK7871.85 S46 1994</classification>
  <classification authority="ddc" edition="20">621.38152</classification>
  <identifier type="isbn">0412577305</identifier>
  <identifier type="lccn">95123012</identifier>
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