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  <titleInfo>
    <nonSort>An </nonSort>
    <title>introduction to the physics of semiconductor devices</title>
  </titleInfo>
  <name type="personal">
    <namePart>Roulston, David J.</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
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  <typeOfResource>text</typeOfResource>
  <genre authority="marc">bibliography</genre>
  <originInfo>
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    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>Oxford University Press</publisher>
    <dateIssued>1999</dateIssued>
    <issuance>monographic</issuance>
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  <language>
    <languageTerm authority="iso639-2b" type="code">eng</languageTerm>
  </language>
  <physicalDescription>
    <form authority="marcform">print</form>
    <extent>xviii, 290 p. : ill. ; 25 cm. + 1 computer laser optical disc (4 3/4 in.)</extent>
  </physicalDescription>
  <abstract>An Introduction to the Physics of Semiconductor Devices provides a thorough yet concise introduction to the physical operation of semiconductor devices including diodes, bipolar transistors, MOS field-effect transistors, and junction field-effect transistors, as well as an overview of numerous other devices.</abstract>
  <abstract>Ideal for second- and third-year students in electrical engineering, electronics, and physics, the text is self-contained and includes enough background physics to be accessible to students with no previous exposure to semiconductor devices. The author covers only essential topics, yet provides an in-depth, authoritative treatment of the subject.</abstract>
  <abstract>Taking a novel approach, he keeps the mathematics simple and emphasizes the basic physical operation of each device, making it easier for students to grasp the underlying physical principles.</abstract>
  <tableOfContents>Ch. 1. Overview -- Ch. 2. Material Properties and Basic P-N Junction Relations -- Ch. 3. P-N Junction Diodes -- Ch. 4. Bipolar Junction Transistors -- Ch. 5. MOS Field-Effect Transistors -- Ch. 6. Junction Field-Effect Transistors -- Ch. 7. Overview of Special-Purpose Semiconductor Devices -- Ch. 8. Silicon Chip Technology and Fabrication Techniques -- App. A. The Bohr Model of the Hydrogen atom -- App. B. The Schrodinger Wave Equation -- App. C. Electron in a Square Potential Well with Infinite Sides -- App. D. Splitting of Energy Levels -- App. E. The Fermi Probability Distribution -- App. F. Density of States and Free-Electron Distribution Versus Energy -- App. G. The Einstein Relation -- App. H. Minority Carrier Diffusion Current and Terminal Current -- App. I. The Wide-Base Diode Derivation -- App. J. The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode -- App. K. Space-Charge Recombination Current --</tableOfContents>
  <tableOfContents>App. L. Maximum Oscillation Frequency of the BJT -- App. M. ECL Propagation Delay Time -- App. N. Noise in Semiconductor Devices -- App. O. The BJT Gummel Integral -- App. P. MOS Inversion-Layer Charge as a Function of Surface Potential -- App. Q. Student BIPOLE on CD-ROM -- App. R. Some Useful Physical Constants -- App. S. List of Important Symbols.</tableOfContents>
  <note type="statement of responsibility">David J. Roulston.</note>
  <note>Includes bibliographical references and index.</note>
  <note>System requirements for accompanying computer disc: DOS and Windows 95.</note>
  <subject authority="lcsh">
    <topic>Semiconductors</topic>
  </subject>
  <classification authority="lcc">QC611 .R86 1999</classification>
  <classification authority="ddc" edition="21">621.3815/2</classification>
  <relatedItem type="series">
    <titleInfo>
      <title>Oxford series in electrical and computer engineering</title>
    </titleInfo>
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  <identifier type="isbn">0195114779 (cloth : alk. paper)</identifier>
  <identifier type="lccn">97052396</identifier>
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    <recordCreationDate encoding="marc">971230</recordCreationDate>
    <recordChangeDate encoding="iso8601">20150525113348.0</recordChangeDate>
    <recordIdentifier source="000">000</recordIdentifier>
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